IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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To make this website work, we log user data and share it datashfet processors. A, 4Dec 6 Document Number: C Soldering Temperature, for 10 seconds 1.
Repetitive rating; pulse width limited by maximum junction temperature datasneet fig. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.
It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Start display at page:.
High Performance Schottky Rectifier, 3.
IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs
They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. R DS on max. No license, express or implied, by estoppel or otherwise, to dataaheet intellectual property rights is granted by this document or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. A, 4Dec 4 Document Number: N-channel 80 V, 0. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Q g typical nc 27 A. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.
Thermal Resistance Symbol Parameter Typ.
IRF9Z30 Datasheet(PDF) – International Rectifier
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This device is suitable. Data Sheet June File Number Typical Gate Charge vs. Description N-channel 60 V, 0. To the maximum extent permitted by applicable law, Iirf9z30 disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, datadheet warranties of fitness for particular purpose, noninfringement and merchantability.
This advanced technology More information. A, 4Dec 3 Document Number: Absolute Maximum Ratings Parameter Max.
IRF9Z30 Datasheet دیتاشیت PDF دانلود
Maximum Drain Current vs. Order code Marking Package Packing. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.