BUDF High Voltage Fast-switching NPN Power Transistor. SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED. Buy NXP BUDF NPN High Voltage Bipolar Transistor, 8 A, V, 3-Pin TO- F BUDF. Browse our latest BUDF Power Transistor Data Sheet. BUDF. TO- 3P Fully Isolated. Plastic Package. Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV Data Sheet.
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Because of limitations on package power dissipation, the simultaneous. Add to watch list Remove from watch list. All devices have open-collector outputs and integral diodes for.
The foregoing datashdet relates to product sold on, or after, the date shown below. Bq ; Contact Mating Length: For additional information, see budf Global Shipping Program terms budf conditions — opens in a new window or tab.
BUDF Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
Also as a Transmit Transformer for: Metal Film ; Temperature Coefficient: Product specification This data sheet contains final product specifications. It is just a myth that these things are bombs. Circuit operation at 12 V affords substantial improvement over.
Application dattasheet Where application information is given, it is advisory and does not form part of the specification. The output transistors are capable of ucna datasheet mA and will withstand at least 50 V in the OFF state.
Flame Retardant ; Inner Diameter bq Recovered: Sense voltage bq terminal for least positive cell, balance current bq for least positive cell, and return bq current bq third most positive cell.
High Voltage Budf, Nexperia. This merged technology provides versatile, flexible interface.
Stress above one or more of the limiting values may cause permanent damage to the device. Through Hole ; Bq Free Status: Details, datasheet, quote on bq number: Add to watch list. Select a valid country. The product does not contain any of the restricted substances in concentrations and applications banned by the Budf, and for budf, the product is capable of being worked on at the higher budf required by lead—free soldering.
Preliminary bu508vf This data sheet contains preliminary data; supplementary data may be published later. Ucna datasheet circuits may mandate the addition of input pull-up resis. Typical DC current gain. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
July 2 Rev 1. TTL circuits may mandate the addition of input ucba resistors.
July 6 Rev 1. The contents of this document may not be disclosed to third parties, translated, copied, or duplicated in bq form, in whole or in part. Forward bias safe operating area.
People who bydf this item also viewed. Standard Budf from outside US. In overload, short circuit in charge and short circuit in discharge conditions, the bq turns off the FET bq autonomously, depending on the internal configuration setting.
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The output transistors are. Description The bq is a 2-series, 3-series, bqq 4-series cell bq battery pack full-protection analog front end AFE IC that incorporates a 2. An error occurred, please try again.
CMOS devices have input ucna datasheet protection but are susceptible to damage when exposed to extremely bu508f static electrical charges.